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| 2SD2403Q Elektronische Bauelemente RoHS Compliant Product D Plastic-Encapsulate Transistor SOT-89 D1 A Features * NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. E1 * This transistor is also available in the TO-223 case with the type designation PZT2403 b1 b L E e e1 C Mechanical Data Case: SOT-89 Plastic Package Weight: approx. 0.016g Marking Code: 156 1. BASE 2. COLLECTOR 3. EMITTER Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Millimeters Min 1.400 0.320 0.360 0.350 4.400 1.400 2.300 3.940 1.500TYP 2.900 0.900 3.100 1.100 Max 1.600 0.520 0.560 0.440 4.600 1.800 2.600 4.250 Min Dimensions In Inches Max 0.063 0.020 0.022 0.017 0.181 0.071 0.102 0.167 0.060TYP 0.114 0.035 0.122 0.043 0.055 0.013 0.014 0.014 0.173 0.055 0.091 0.155 Maximum Ratings and Thermal Characteristics (TA = 25OC unless otherwise noted) Parameter Collector Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Power Dissipation at TA = 25C Thermal Resistance Junction to Ambiant Air Junction Temperature Storage Temperature Range Notes: Device on alumina substrate. Symbol VCBO VCEO VEBO IC IC Ptot RJA Tj TS Value 80 60 5.0 3 6 1.0 150(1) 150 -55 to +150 f = 30MHz Min 80 60 5 70 100 80 40 140 Typ 0.12 0.43 0.9 0.8 200 200 170 80 175 45 800 Max 100 100 0.2 0.6 1.25 1.0 300 30 Unit V V V A W C/W C C Electrical Characteristics (TJ = 25C unless otherwise noted) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Emitter Cotoff Current Collector Cutoff Current Collector-emitter Saturation Voltage 1 Collector-emitter Saturation Voltage 2 Base-emitter Saturation Voltage Base-emitter xxx Voltage DC Current Gain 1 DC Current Gain 2 DC Current Gain 3 DC Current Gain 4 Gain-Bandwidth Product On-Time Off-Time Output Capacitance http://www.SeCoSGmbH.com Symbol VCBO VCEO VEBO IEBO ICBO VCE(sat)1 VCE(sat)2 VBE(sat) VBE(on) hFE1 hFE2 hFE3 hFE4 fT ton toff Cob Test Condition IC = 100uA, IE = 0 IC = 10mA, IB = 0 IE = 100uA, IC = 0 VCE = 4V, IC = 0 VCB = 60V, IE = 0 IC = 1A, IB = 0.1A IC = 3A, IB = 0.3A IC = 1A, IB = 0.1A IC = 1A, VCE = 2V VCE = 2V, IC = 50 mA VCE = 2V, IC = 500 mA VCE = 2V, IC = 1 A VCE = 2V, IC = 2 A VCE = 5V, IC = 100 mA f=100MHz VCC = 10V, IC = 500 mA IB1 = IB2 = 50mA VCB = 10V, f = 2 MHz Unit V V V nA nA V V V V MHz ns pF Page 1 of 2 Any changing of specification will not be informed individual 01-Jun-2002 Rev. A 2SD2403Q Elektronische Bauelemente Plastic-Encapsulate Transistor Collector Current (A) Collector Current (A) Collector Current (A) Collector Current (A) Collector Emitter Voltage (V) Collector Current (A) http://www.SeCoSGmbH.com Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 2 of 2 |
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